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12 products
Samsung 16GB 2R PC3L-10600R DDR3-1333 LP ECC RDIMM
M392B2G70AM0-YH9
Regular price $160.00 $184.00 incl GST Save $-160.00Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
Specs | |
Features: | |
Internal memory: | 16 GB |
Memory layout (modules x size): | 1 x 16 GB |
Internal memory type: | DDR3 |
Memory clock speed: | 1333 MHz |
Component for: | PC/server |
Memory form factor: | 240-pin DIMM |
Buffered memory type: | Registered (buffered) |
ECC: | ✓ |
CAS latency: | 9 |
Memory ranking: | 2 |
Memory voltage: | 1.5 V |
Samsung 16GB 4R PC3L-8500R DDR3-1066 ECC RDIMM
M393B2K70CM0-YF8
Regular price $160.00 $184.00 incl GST Save $-160.00Specs | |
Features: | |
Internal memory: | 16 GB |
Memory layout (modules x size): | 1 x 16 GB |
Internal memory type: | DDR3 |
Memory clock speed: | 1066 MHz |
Component for: | PC/server |
Memory form factor: | 240-pin DIMM |
Buffered memory type: | Registered (buffered) |
ECC: | ✓ |
CAS latency: | 7 |
Memory ranking: | 4 |
Memory voltage: | 1.5 V |
Halogen-free: | ✓ |
Sustainability certificates: | RoHS |
Weight & dimensions: | |
Width: | 133.3 mm |
Height: | 30 mm |
Samsung 4GB 1R PC3-10600R DDR3-1333 ECC LP RDIMM
M392B5270CH0-CH9
Regular price $40.00 $46.00 incl GST Save $-40.00Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
Specs | |
Features: | |
Internal memory: | 4 GB |
Memory layout (modules x size): | 1 x 4 GB |
Internal memory type: | DDR4 |
Memory clock speed: | 1333 MHz |
Component for: | PC/server |
Memory form factor: | 240-pin DIMM |
Buffered memory type: | Registered (buffered) |
ECC: | ✓ |
CAS latency: | 9 |
Memory ranking: | 1 |
Memory voltage: | 1.35,1.5 V |
Samsung 4GB 1R PC3L-10600R DDR3-1333 ECC LP RDIMM
M392B5270DH0-YH9
Regular price $40.00 $46.00 incl GST Save $-40.00Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
Specs | |
Features: | |
Internal memory: | 4 GB |
Memory layout (modules x size): | 1 x 4 GB |
Internal memory type: | DDR3 |
Memory clock speed: | 1333 MHz |
Component for: | PC/server |
Memory form factor: | 240-pin DIMM |
Buffered memory type: | Registered (buffered) |
ECC: | ✓ |
CAS latency: | 9 |
Memory ranking: | 1 |
Memory voltage: | 1.35,1.5 V |
Samsung 4GB 1R PC3L-10600R DDR3-1333 ECC RDIMM (Sun 371-4965-01)
M393B5270CH0-YH9
Regular price $45.00 $51.75 incl GST Save $-45.00Two types of DRAM are widely used for deployment in current generation servers: registered memory, and fully-buffered (FB) memory. Both these memory types are commercially available as DIMMs (dual inline memory modules). Registered DIMMs (or RDIMMs) are designed with an additional hardware register between the DRAM module and the system’s memory controller. RDIMMs present several advantages for the system, such as a lower electrical load on the memory controller and sustained stability even with an increase in the number of installed memory modules. Thus, RDIMMs are often the default choice for deployment in server-class computing systems. Fully-buffered DIMMs (or FB-DIMMs) are intended to be used in systems requiring higher memory densities with limited board space. As opposed to the parallel data transfer technique used in normal DRAM, FB-DIMMs transfer data in a serial format, using an additional buffer, known as advanced memory buffer (AMB) between the memory controller and the FB-DIMM modules. The AMB acts as an intermediary and handles all data reads/writes for the memory modules, taking care of issues such as signal degradation and error correction and reducing any overhead on the memory controller. Thus, FB-DIMMs prove to be a reliable alternative for deployment in server-grade machines.
Specs | |
Features: | |
Internal memory: | 4 GB |
Memory layout (modules x size): | 1 x 4 GB |
Internal memory type: | DDR3 |
Memory clock speed: | 1333 MHz |
Component for: | PC/server |
Memory form factor: | 240-pin DIMM |
Buffered memory type: | Registered (buffered) |
CAS latency: | 9 |
Memory ranking: | 1 |
Memory voltage: | 1.35 V |
Halogen-free: | ✓ |
Sustainability certificates: | RoHS |
Weight & dimensions: | |
Width: | 133.3 mm |
Height: | 30 mm |
Samsung 4GB 2R PC3-10600R DDR3-1333 ECC LP RDIMM
M392B5170EM1-CH9
Regular price $40.00 $46.00 incl GST Save $-40.00Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
Specs | |
Features: | |
Internal memory: | 4 GB |
Memory layout (modules x size): | 1 x 4 GB |
Internal memory type: | DDR3 |
Memory clock speed: | 1333 MHz |
Component for: | PC/server |
Memory form factor: | 240-pin DIMM |
Buffered memory type: | Registered (buffered) |
ECC: | ✓ |
CAS latency: | 9 |
Memory ranking: | 2 |
Memory voltage: | 1.5 V |
Samsung 4GB PC3-10600 1333 ECC REG 2R
M393B5170FH0-CH9
Regular price $75.00 $86.25 incl GST Save $-75.00Double Data Rate Three, Synchronous DRAM, or DDR3, is the new generation of high performance, ultra-low-power memory interface technology used in high performance servers, desktops and notebooks. As the number one supplier in memory, Samsung continues to lead the industry with cutting-edge SDRAM products from the first DDR in 1997, DDR2 in 2001 and DDR3 in 2005. Samsung's high performance main memory solutions are based on JEDEC standards and leverage the company's leadership in advanced research and development of semiconductor process technology.
Samsung's DDR3 brings new levels of performance to notebooks, desktops and servers and pushes the envelope in key areas like power consumption, speed and bandwidth. Our recent 30nm class, 1.35V, 2Gb DDR3 is the world's first ultra-low-power memory technology, with more than a 76% power savings over traditional DDR2 at 2x the bandwidth. When you're ready to make a move to DDR3 or are considering upgrading your systems, we're here to provide the best optimal solution for enhancing your competitive edge.
Specs | |
Features: | |
Internal memory: | 4 GB |
Memory layout (modules x size): | 2 x 2 GB |
Internal memory type: | DDR3 |
Memory clock speed: | 1333 MHz |
Component for: | PC/server |
Memory form factor: | 240-pin DIMM |
Buffered memory type: | Registered (buffered) |
ECC: | ✓ |
CAS latency: | 9 |
Memory voltage: | 1.5 V |
Packaging data: | |
Package type: | DIMM |
Other features: | |
Chips organisation: | 512Mx72 |
Samsung 8GB 2R PC3-10600R DDR3-1333 ECC RDIMM
M393B1K70CHD-CH9
Regular price $80.00 $92.00 incl GST Save $-80.00Specs | |
Features: | |
Internal memory: | 8 GB |
Memory layout (modules x size): | 1 x 8 GB |
Internal memory type: | DDR3 |
Memory clock speed: | 1333 MHz |
Component for: | PC/server |
Buffered memory type: | Registered (buffered) |
ECC: | ✓ |
CAS latency: | 9 |
Memory voltage: | 1.5 V |
Operational conditions: | |
Operating temperature (T-T): | 0 - 85 °C |
Samsung 8GB 2R PC3L-10600R DDR-1333 LP ECC RDIMM
M392B1K70DM0-YH9
Regular price $80.00 $92.00 incl GST Save $-80.00Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
Specs | |
Features: | |
Internal memory: | 8 GB |
Memory layout (modules x size): | 1 x 8 GB |
Internal memory type: | DDR3 |
Memory clock speed: | 1333 MHz |
Component for: | PC/server |
Memory form factor: | 240-pin DIMM |
Buffered memory type: | Registered (buffered) |
ECC: | ✓ |
CAS latency: | 9 |
Memory ranking: | 2 |
Memory voltage: | 1.35,1.5 V |
Samsung 8GB 2R PC3L-10600R DDR3-1333 ECC RDIMM
M393B1K70CH0-YH9
Regular price $80.00 $92.00 incl GST Save $-80.00You need the right expert for the right PC memory solution.
Samsung is a leader in the DRAM market, with our DRAM being selected by most OEMs for many years.
Embrace the cutting-edge Samsung DDR4 to take your PC to a new dimension of high speed and low energy performance.
Improved bandwidth for high-end applications.
With PC applications becoming more critical and complex, personal computing has set its toughest demands yet. PCs today need to provide exceptional speed to deliver the performance required.
Samsung 2xnm DDR4 UDIMM and SODIMM enable initial bandwidth of 2,400 Mbps, which can achieve up to the JEDEC-defined 3,200 Mbps. DDR4 has 2 times higher bandwidth than DDR3.
Complete multi-tasking with less energy.
Consumers want to be able to rely on excellent battery power to complete their tasks. Samsung PC DRAM provides longer time unplugged through lower power consumption. This enables extended battery life for notebooks while maintaining high performance.
Samsung DDR4 SODIMM and UDIMM consume less power with their unique 2xnm technology. Samsung’s 2xnm DDR4 operating at 1.2V achieves approximately 26% higher performance/watt compared to 2xnm DDR3 operating at 1.5V.
Samsung also provides 2xnm LPDDR4 operating at 1.1V, achieving 37% increase in power efficiency than 2xnm LPDDR3 operating at 1.2V.
Double your capacity with the world’s 1st 8Gb chips.
The advancement in density has enabled Samsung to offer bigger capacity DRAM, delivering the faster data transmission speed that devices require today. PCs can benefit from high density DRAM by using fewer DRAM components, which leads to space saving.
Samsung DDR4 UDIMM can achieve the max capacity of 128GB using the world’s 1st 8Gb chips, which is 2 times bigger than that of DDR3’s 64GB made of 4Gb chips.
Specs | |
Features: | |
Internal memory: | 8 GB |
Memory layout (modules x size): | 1 x 8 GB |
Internal memory type: | DDR3 |
Memory clock speed: | 1333 MHz |
Component for: | PC/server |
Memory form factor: | 240-pin DIMM |
Buffered memory type: | Registered (buffered) |
ECC: | ✓ |
CAS latency: | 9 |
Memory ranking: | 1 |
Module configuration: | 1024M x 72 |
Row cycle time: | 9 ns |
Refresh row cycle time: | 9 ns |
Halogen-free: | ✓ |
Operational conditions: | |
Operating temperature (T-T): | 0 - 85 °C |
Sustainability certificates: | RoHS |
Weight & dimensions: | |
Width: | 133.3 mm |
Depth: | 4 mm |
Height: | 30 mm |
Samsung 8GB 2R PC3L-10600R DDR3-1333 ECC RDIMM
M393B1K70DH0-YH9
Regular price $80.00 $92.00 incl GST Save $-80.00You need the right expert for the right PC memory solution.
Samsung is a leader in the DRAM market, with our DRAM being selected by most OEMs for many years.
Embrace the cutting-edge Samsung DDR4 to take your PC to a new dimension of high speed and low energy performance.
Improved bandwidth for high-end applications.
With PC applications becoming more critical and complex, personal computing has set its toughest demands yet. PCs today need to provide exceptional speed to deliver the performance required.
Samsung 2xnm DDR4 UDIMM and SODIMM enable initial bandwidth of 2,400 Mbps, which can achieve up to the JEDEC-defined 3,200 Mbps. DDR4 has 2 times higher bandwidth than DDR3.
Complete multi-tasking with less energy.
Consumers want to be able to rely on excellent battery power to complete their tasks. Samsung PC DRAM provides longer time unplugged through lower power consumption. This enables extended battery life for notebooks while maintaining high performance.
Samsung DDR4 SODIMM and UDIMM consume less power with their unique 2xnm technology. Samsung’s 2xnm DDR4 operating at 1.2V achieves approximately 26% higher performance/watt compared to 2xnm DDR3 operating at 1.5V.
Samsung also provides 2xnm LPDDR4 operating at 1.1V, achieving 37% increase in power efficiency than 2xnm LPDDR3 operating at 1.2V.
Double your capacity with the world’s 1st 8Gb chips.
The advancement in density has enabled Samsung to offer bigger capacity DRAM, delivering the faster data transmission speed that devices require today. PCs can benefit from high density DRAM by using fewer DRAM components, which leads to space saving.
Samsung DDR4 UDIMM can achieve the max capacity of 128GB using the world’s 1st 8Gb chips, which is 2 times bigger than that of DDR3’s 64GB made of 4Gb chips.
Specs | |
Features: | |
Internal memory: | 8 GB |
Memory layout (modules x size): | 1 x 8 GB |
Internal memory type: | DDR3 |
Memory clock speed: | 1333 MHz |
Component for: | PC/server |
Memory form factor: | 240-pin DIMM |
Buffered memory type: | Registered (buffered) |
ECC: | ✓ |
CAS latency: | 9 |
Memory ranking: | 2 |
Memory voltage: | 1.35 V |
Module configuration: | 1024M x 72 |
Row cycle time: | 9 ns |
Refresh row cycle time: | 9 ns |
Halogen-free: | ✓ |
Operational conditions: | |
Operating temperature (T-T): | 0 - 85 °C |
Sustainability certificates: | RoHS |
Weight & dimensions: | |
Width: | 133.3 mm |
Depth: | 4 mm |
Height: | 30 mm |
Samsung 8GB 2R PC3L-12800R DDR3-1600 ECC RDIMM
M393B1K70QB0-YK0
Regular price $80.00 $92.00 incl GST Save $-80.00Two types of DRAM are widely used for deployment in current generation servers: registered memory, and fully-buffered (FB) memory. Both these memory types are commercially available as DIMMs (dual inline memory modules). Registered DIMMs (or RDIMMs) are designed with an additional hardware register between the DRAM module and the system’s memory controller. RDIMMs present several advantages for the system, such as a lower electrical load on the memory controller and sustained stability even with an increase in the number of installed memory modules. Thus, RDIMMs are often the default choice for deployment in server-class computing systems. Fully-buffered DIMMs (or FB-DIMMs) are intended to be used in systems requiring higher memory densities with limited board space. As opposed to the parallel data transfer technique used in normal DRAM, FB-DIMMs transfer data in a serial format, using an additional buffer, known as advanced memory buffer (AMB) between the memory controller and the FB-DIMM modules. The AMB acts as an intermediary and handles all data reads/writes for the memory modules, taking care of issues such as signal degradation and error correction and reducing any overhead on the memory controller. Thus, FB-DIMMs prove to be a reliable alternative for deployment in server-grade machines.
Specs | |
Features: | |
Internal memory: | 8 GB |
Memory layout (modules x size): | 1 x 8 GB |
Internal memory type: | DDR3L |
Memory clock speed: | 1600 MHz |
Component for: | PC/server |
Memory form factor: | 240-pin DIMM |
Buffered memory type: | Registered (buffered) |
ECC: | ✓ |
CAS latency: | 11 |
Memory ranking: | 2 |
Memory voltage: | 1.35 V |
Module configuration: | 1024M x 72 |
Operational conditions: | |
Operating temperature (T-T): | 0 - 85 °C |
Weight & dimensions: | |
Height: | 30 mm |